Specific Features of Closed-Mode Formation in Rectangular Resonators Based on InGaAs/AlGaAs/GaAs Heterostructures for High-Power Semiconductor Lasers
Crossref DOI link: https://doi.org/10.1134/S1063782619060162
Published Online: 2019-06-10
Published Print: 2019-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Podoskin, A. A.
Romanovich, D. N.
Shashkin, I. S.
Gavrina, P. S.
Sokolova, Z. N.
Slipchenko, S. O.
Pikhtin, N. A.
Text and Data Mining valid from 2019-06-01
Version of Record valid from 2019-06-01
Article History
Received: 29 December 2018
Revised: 14 January 2019
Accepted: 14 January 2019
First Online: 10 June 2019