Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate
Crossref DOI link: https://doi.org/10.1134/S1063782619080165
Published Online: 2019-08-07
Published Print: 2019-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Seredin, P. V.
Goloshchapov, D. L.
Zolotukhin, D. S.
Lenshin, A. S.
Mizerov, A. M.
Arsentyev, I. N.
Leiste, Harald
Rinke, Monika
Text and Data Mining valid from 2019-08-01
Version of Record valid from 2019-08-01
Article History
Received: 12 February 2019
Revised: 1 April 2019
Accepted: 1 April 2019
First Online: 7 August 2019