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Formation of ncl-Si in the Amorphous Matrix a-SiOx:H Located near the Anode and on the Cathode, Using a Time-Modulated DC Plasma with the (SiH4–Ar–O2) Gas Phase ($${{{\text{C}}}_{{{{{\text{O}}}_{2}}}}}$$ = 21.5 mol %)

Crossref DOI link: https://doi.org/10.1134/S1063782619110228

Published Online: 2019-11-06

Published Print: 2019-11

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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