Model of the Effect of the Gate Bias on MOS Structures under Ionizing Radiation
Crossref DOI link: https://doi.org/10.1134/S1063782620020025
Published Online: 2020-03-03
Published Print: 2020-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Aleksandrov, O. V.
Mokrushina, S. A.
Text and Data Mining valid from 2020-02-01
Version of Record valid from 2020-02-01
Article History
Received: 25 June 2019
Revised: 10 September 2019
Accepted: 30 September 2019
First Online: 3 March 2020