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Light Characteristics of Narrow-Stripe High-Power Semiconductor Lasers (1060 nm) Based on Asymmetric AlGaAs/GaAs Heterostructures with a Broad Waveguide

Crossref DOI link: https://doi.org/10.1134/S106378262004017X

Published Online: 2020-04-28

Published Print: 2020-04

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Shashkin, I. S.

Leshko, A. Y.

Nikolaev, D. N.

Shamakhov, V. V.

Rudova, N. A.

Bakhvalov, K. V.

Lutetskiy, A. V.

Kapitonov, V. A.

Zolotarev, V. V.

Slipchenko, S. O.

Pikhtin, N. A.

Kop’ev, P. S.
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Text and Data Mining valid from 2020-04-01

Version of Record valid from 2020-04-01
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Article History

Received: 12 December 2019

Revised: 23 December 2019

Accepted: 23 December 2019

First Online: 28 April 2020

CONFLICT OF INTEREST

: The authors state that they have no conflict of interest.

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