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Investigation of Pd|HfO2|AlGaN|GaN Enhancement-Mode High Electron Mobility Transistor with Sensitization, Activation, and Electroless-Plating Approaches

Crossref DOI link: https://doi.org/10.1134/S1063782620070076

Published Online: 2020-06-30

Published Print: 2020-07

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Lin, Y.-C.

Niu, J.-S.

Liu, W.-C.

Tsai, J.-H.
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Text and Data Mining valid from 2020-06-30

Version of Record valid from 2020-06-30
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Article History

Received: 10 February 2020

Revised: 10 March 2020

Accepted: 10 March 2020

First Online: 30 June 2020

CONFLICT OF INTEREST

: The authors declare that they have no conflict of interest.

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