GaAs Semiconductor Passivated by (NH4)2Sx: Analysis of Different Passivation Methods Using Electrical Characteristics and XPS Measurements
Crossref DOI link: https://doi.org/10.1134/S106378262007009X
Published Online: 2020-06-30
Published Print: 2020-07
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Mahmoodnia, H.
Salehi, A.
Mastelaro, V. R.
Text and Data Mining valid from 2020-06-30
Version of Record valid from 2020-06-30
Article History
Received: 31 January 2020
Revised: 13 February 2020
Accepted: 19 February 2020
First Online: 30 June 2020
CONFLICT OF INTEREST
: The authors declare that they have no conflict of interest.