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Investigation of the Effect of Atomic Composition on the Plasma-Chemical Etching Rate of Silicon Nitride in High-Power Transistors Based on an AlGaN/GaN Heterojunction

Crossref DOI link: https://doi.org/10.1134/S1063782620080096

Published Online: 2020-08-05

Published Print: 2020-08

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Garmash, V. I.

Zemlyakov, V. E.

Egorkin, V. I.

Kovalchuk, A. V.

Shapoval, S. Y.
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Text and Data Mining valid from 2020-08-01

Version of Record valid from 2020-08-01
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Article History

Received: 23 March 2020

Revised: 31 March 2020

Accepted: 31 March 2020

First Online: 5 August 2020

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