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Compensation for the Nonlinearity of the Drain–Gate I–V Characteristic in Field-Effect Transistors with a Gate Length of ~100 nm

Published Online: 2020-09-08

Published Print: 2020-09

Authors

Tarasova, E. A.

Obolensky, S. V.

Khazanova, S. V.

Grigoryeva, N. N.

Golikov, O. L.

Ivanov, A. B.

Puzanov, A. S.
License Information

Text and Data Mining valid from 2020-09-01

Version of Record valid from 2020-09-01
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Article History

Received: 15 April 2020

Revised: 21 April 2020

Accepted: 21 April 2020

First Online: 8 September 2020

CONFLICT OF INTEREST

: The authors declare that they have no conflict of interest.

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