Analytical Drain Current Modeling and Simulation of Triple Material Gate-All-Around Heterojunction TFETs Considering Depletion Regions
Crossref DOI link: https://doi.org/10.1134/S1063782620120398
Published Online: 2020-12-04
Published Print: 2020-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Usha, C.
Vimala, P.
Text and Data Mining valid from 2020-12-01
Version of Record valid from 2020-12-01
Article History
Received: 11 May 2020
Revised: 7 July 2020
Accepted: 13 August 2020
First Online: 4 December 2020
CONFLICT OF INTEREST
: The authors declare that they have no conflict of interest.