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Forming Low-Resistance p-Type Layers in Ga1 – xAlxN/GaN Heterostructures

Crossref DOI link: https://doi.org/10.1134/S1063782620130126

Published Online: 2021-01-04

Published Print: 2020-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Vigdorovich, E. N.
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Text and Data Mining valid from 2020-12-01

Version of Record valid from 2020-12-01
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Article History

Received: 29 October 2018

Revised: 29 October 2018

Accepted: 22 January 2019

First Online: 4 January 2021