Microstructural and Electronic Properties of Rapid Thermally Grown MoS2|Silicon Hetero-Junctions with Various Process Parameters
Crossref DOI link: https://doi.org/10.1134/S1063782621060117
Published Online: 2022-03-22
Published Print: 2021-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Pradhan, D.
Kar, J. P.
Text and Data Mining valid from 2021-12-01
Version of Record valid from 2021-12-01
Article History
Received: 24 November 2020
Revised: 24 November 2020
Accepted: 2 February 2021
First Online: 22 March 2022
CONFLICT OF INTEREST
: The authors declare that they have no conflict of interest.