Effect of the Ultra-Thin GaN Interlayer on the Electrical and Photoelectrical Parameters of Au|GaAs Schottky Barrier Diodes
Crossref DOI link: https://doi.org/10.1134/S1063782621090086
Published Online: 2022-04-17
Published Print: 2021-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kacha, A. H.
Amroun, M. N.
Akkal, B.
Benamara, Z.
Text and Data Mining valid from 2021-12-01
Version of Record valid from 2021-12-01
Article History
Received: 19 March 2021
Revised: 19 March 2021
Accepted: 19 April 2021
First Online: 17 April 2022
CONFLICT OF INTEREST
: The authors declare that they have no conflict of interest.