Leakage Current through the Gate Dielectric in Transistors with Channel Lengths of up to 100 nm
Crossref DOI link: https://doi.org/10.1134/S1063782622070089
Published Online: 2022-08-30
Published Print: 2022-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Shobolova, T. A.
Gasenin, V. V.
Shobolov, E. L.
Obolenskii, S. V.
Text and Data Mining valid from 2022-06-01
Version of Record valid from 2022-06-01
Article History
Received: 2 March 2022
Revised: 25 March 2022
Accepted: 25 March 2022
First Online: 30 August 2022