Ion Doping of Silicon Carbide in the Technology of High-Power Electronic Devices (Review)
Crossref DOI link: https://doi.org/10.1134/S1063782622130024
Published Online: 2023-04-02
Published Print: 2022-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Afanasev, A. V.
Ilyin, V. A.
Luchinin, V. V.
Text and Data Mining valid from 2022-12-01
Version of Record valid from 2022-12-01
Article History
Received: 2 March 2022
Revised: 28 March 2022
Accepted: 7 July 2022
First Online: 2 April 2023
CONFLICT OF INTEREST
: We declare that we have no conflicts of interest.