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On the Effect of Etching with a Focused Ga+ Ion Beam in the Energy Range 12–30 keV on the Luminescent Properties of the Al0.18Ga0.82As/GaAs/Al0.18Ga0.82As Heterostructure

Crossref DOI link: https://doi.org/10.1134/S1063782623080171

Published Online: 2024-03-13

Published Print: 2023-06

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Voznyuk, G. V.

Grigorenko, I. N.

Lila, A. S.

Mitrofanov, M. I.

Nikolaev, D. N.

Evtikhiev, V. P.
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Text and Data Mining valid from 2023-06-01

Version of Record valid from 2023-06-01
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Article History

Received: 8 December 2022

Revised: 12 December 2022

Accepted: 12 December 2022

First Online: 13 March 2024

CONFLICT OF INTEREST

: The authors declare that they have no conflict of interest.

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