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Features of Formation of InxGa1 – xN Bulk Layers in the Immiscibility Gap of Solid Solutions (x ~ 0.6) by Molecular Beam Epitaxy with Plasma Nitrogen Activation

Crossref DOI link: https://doi.org/10.1134/S1063782624030072

Published Online: 2024-09-04

Published Print: 2024-03

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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