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Effect of the Ultra-thin GaN Interlayer on the Mechanisms of Conduction in Au/GaAs Schottky Barrier Diodes

Published Online: 2025-06-18

Published Print: 2025-06

Authors

Khales, Hammouche

Kacha, Arslane Hatem

Akkal, Boudali

Benamara, Zineb
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Text and Data Mining valid from 2025-06-01

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Article History

Received: 3 January 2025

Revised: 5 April 2025

Accepted: 7 April 2025

First Online: 18 June 2025

CONFLICT OF INTEREST

: The authors of this work declare that they have no conflicts of interest.

: The authors confirm that the data of this study are available within the article.

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