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Electrostatic Analysis and Performance Optimization of Si Doped HfO2 Ferroelectric Material Based Negative Capacitance Field Effect Transistor (NCFET)

Crossref DOI link: https://doi.org/10.1134/S1063782624602693

Published Online: 2025-04-24

Published Print: 2025-04

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Ahmed, Md. Ibrahim https://orcid.org/0009-0000-5967-8236
Hasan, Kamrul https://orcid.org/0000-0002-9808-6193
Rashid, Mohammad Junaebur https://orcid.org/0000-0001-9465-2947
Sabuktagin, Mohammed Shahriar
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Text and Data Mining valid from 2025-04-01

Version of Record valid from 2025-04-01
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Article History

Received: 5 December 2024

Revised: 21 January 2025

Accepted: 28 January 2025

First Online: 24 April 2025

CONFLICT OF INTEREST

: The authors of this work declare that they have no conflicts of interest.

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