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Study of p–i–n Diode Structures on High-Resistivity Silicon Substrates Using Deep-Level Transient Spectroscopy

Published Online: 2025-01-27

Published Print: 2024-12

Authors

Grigoreva, T. V.

Golubkov, S. A.

Boiko, A. N.
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Text and Data Mining valid from 2024-12-01

Version of Record valid from 2024-12-01
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Article History

Received: 26 December 2023

Revised: 10 January 2024

Accepted: 14 June 2024

First Online: 27 January 2025

CONFLICT OF INTEREST

: The authors of this work declare that they have no conflicts of interest.

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