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Investigation of Multi-Material Barrier GaN-based High Electron Mobility Transistors with Double-Deck Gate Field Plate

Published Online: 2025-08-14

Published Print: 2025-08

Authors

Kharei, Pichingla

Baidya, Achinta

Maity, Niladri Pratap

Maity, Reshmi
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Text and Data Mining valid from 2025-08-01

Version of Record valid from 2025-08-01
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Article History

Received: 12 February 2025

Revised: 13 May 2025

Accepted: 15 May 2025

First Online: 14 August 2025

CONFLICT OF INTEREST

: The authors of this work declare that they have no conflicts of interest.

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