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Breakdown Voltage Improvement and RF Analysis of T-gate AlGaN/GaN HEMTs with Various High-k Passivation Materials

Crossref DOI link: https://doi.org/10.1134/S1063782625602250

Published Online: 2025-10-12

Published Print: 2025-10

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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