Crossmark

Performance Comparison of GaN-based HEMTs on β-Ga2O3 Substrates Using Compositionally-Graded InGaN and AlGaN Back Barriers for High Frequency Applications

Crossref DOI link: https://doi.org/10.1134/S106378262560353X

Published Online: 2026-02-02

Published Print: 2026-01

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Jiavana, K. Ferents Koni

Bha, J. K. Kasthuri

Murugapandiyan, P.

Natarajan, Ramkumar
License Information

Text and Data Mining valid from 2026-01-01

Version of Record valid from 2026-01-01
More Information

Article History

Received: 1 September 2025

Revised: 11 October 2025

Accepted: 13 October 2025

First Online: 2 February 2026

CONFLICT OF INTEREST

: The authors of this work declare that they have no conflicts of interest.

Document is current

Any future updates will be listed below