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Effect of AlGaN and InAlGaN Barrier Layers on the Performance of GaN-based HEMTs on Sapphire Substrates

Published Online: 2026-03-13

Published Print: 2026-03

Authors

Gowtham, P.

Venkatesan, R. S.

Subhashini, T.

Saravanan, M.

Narayana, A. Lakshmi
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Text and Data Mining valid from 2026-03-01

Version of Record valid from 2026-03-01
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Article History

Received: 28 November 2025

Revised: 8 January 2026

Accepted: 15 January 2026

First Online: 13 March 2026

CONFLICT OF INTEREST

: The authors of this work declare that they have no conflicts of interest.

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