Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN
Crossref DOI link: https://doi.org/10.1134/S1063783415090218
Published Online: 2015-09-03
Published Print: 2015-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kukushkin, S. A.
Osipov, A. V.
Rozhavskaya, M. M.
Myasoedov, A. V.
Troshkov, S. I.
Lundin, V. V.
Sorokin, L. M.
Tsatsul’nikov, A. F.
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