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Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN

Crossref DOI link: https://doi.org/10.1134/S1063783415090218

Published Online: 2015-09-03

Published Print: 2015-09

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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