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Effect of the nand p-type Si(100) substrates with a SiC buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN

Crossref DOI link: https://doi.org/10.1134/S1063783415100042

Published Online: 2015-11-28

Published Print: 2015-10

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Bessolov, V. N.

Grashchenko, A. S.

Konenkova, E. V.

Myasoedov, A. V.

Osipov, A. V.

Red’kov, A. V.

Rodin, S. N.

Rubets, V. P.

Kukushkin, S. A.
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Text and Data Mining valid from 2015-10-01

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Article History

Received: 16 April 2015

First Online: 28 November 2015

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