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Electrophysical properties of Cd x Hg1–x Te (x = 0.3) films grown by molecular beam epitaxy on Si(013) substrates

Crossref DOI link: https://doi.org/10.1134/S1063783416040296

Published Online: 2016-05-15

Published Print: 2016-04

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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