Group III Acceptors with Shallow and Deep Levels in Silicon Carbide: ESR and ENDOR Studies
Crossref DOI link: https://doi.org/10.1134/S1063783418040121
Published Online: 2018-04-18
Published Print: 2018-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Il’in, I. V.
Uspenskaya, Yu. A.
Kramushchenko, D. D.
Muzafarova, M. V.
Soltamov, V. A.
Mokhov, E. N.
Baranov, P. G.
Text and Data Mining valid from 2018-04-01
Article History
Received: 30 June 2017
First Online: 18 April 2018