Mechanism of Formation of Carbon–Vacancy Structures in Silicon Carbide during Its Growth by Atomic Substitution
Crossref DOI link: https://doi.org/10.1134/S1063783418090184
Published Online: 2018-09-06
Published Print: 2018-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kukushkin, S. A.
Osipov, A. V.
Text and Data Mining valid from 2018-09-01
Version of Record valid from 2018-09-01
Article History
Received: 19 March 2018
First Online: 6 September 2018