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Dislocation Reactions in a Semipolar Gallium Nitride Layer Grown on a Vicinal Si(001) Substrate Using Aluminum Nitride and 3C–SiC Buffer Layers

Published Online: 2020-02-21

Published Print: 2019-12

Authors

Sorokin, L. M.

Gutkin, M. Yu.

Myasoedov, A. V.

Kalmykov, A. E.

Bessolov, V. N.

Kukushkin, S. A.
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Text and Data Mining valid from 2019-12-01

Version of Record valid from 2019-12-01
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Article History

Received: 16 July 2019

Revised: 16 July 2019

Accepted: 25 July 2019

First Online: 21 February 2020

CONFLICT OF INTERESTS

: The authors declare that they have no conflicts of interest.

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