Forming a Type-II Heterojunction in the InAsSb/InAsSbP Semiconductor Structure
Crossref DOI link: https://doi.org/10.1134/S1063783420110244
Published Online: 2020-11-16
Published Print: 2020-11
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Romanov, V. V.
Ivanov, E. V.
Moiseev, K. D.
Text and Data Mining valid from 2020-11-01
Version of Record valid from 2020-11-01
Article History
Received: 26 June 2020
Revised: 26 June 2020
Accepted: 30 June 2020
First Online: 16 November 2020
CONFLICT OF INTEREST
: The authors declare that they have no conflicts of interest.