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Comparative Analysis of In0.15Ga0.85N and β-Ga2O3 Back Barriers in β-Ga2O3-Buffered AlGaN/GaN HEMT Structures for High-Speed RF Electronics

Crossref DOI link: https://doi.org/10.1134/S1063783425603339

Published Online: 2026-02-02

Published Print: 2026-01

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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