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Comparative Design of p-GaN Gate Al0.23Ga0.77N/GaN HEMTs with Al0.05Ga0.95 and In0.1Ga0.9N Back Barriers for RF Power Applications

Published Online: 2026-03-13

Published Print: 2026-03

Authors

Gowtham, P.

Vetrichelvi, G.

Balaji, K.

Karthikeyan, S.
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Text and Data Mining valid from 2026-03-01

Version of Record valid from 2026-03-01
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Article History

Received: 28 October 2025

Revised: 14 December 2025

Accepted: 15 December 2025

First Online: 13 March 2026

CONFLICT OF INTEREST

: The authors of this work declare that they have no conflicts of interest.

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