Comparative analysis of breakdown mechanism in thin SiO2 oxide films in metal–oxide–semiconductor structures under the action of heavy charged particles and a pulsed voltage
Crossref DOI link: https://doi.org/10.1134/S1063784216020286
Published Online: 2016-03-25
Published Print: 2016-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Zinchenko, V. F.
Lavrent’ev, K. V.
Emel’yanov, V. V.
Vatuev, A. S.
Text and Data Mining valid from 2016-02-01