Influence of the channel–gate barrier height on the detection properties of a field-effect transistor in the microwave and terahertz ranges
Crossref DOI link: https://doi.org/10.1134/S1063784217050139
Published Online: 2017-05-25
Published Print: 2017-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Korolyov, S. A.
Vostokov, N. V.
D’yakonova, N. V.
Shashkin, V. I.
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