Influence of a low-temperature GaN cap layer on the electron concentration in AlGaN/GaN heterostructure
Crossref DOI link: https://doi.org/10.1134/S1063784217080035
Published Online: 2017-08-20
Published Print: 2017-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Andreev, A. A.
Vavilova, E. A.
Ezubchenko, I. S.
Zanaveskin, M. L.
Maiboroda, I. O.
License valid from 2017-08-01