Heterostructures with InGaAs/GaAs quantum dots doped by transition elements. Part I: Photoluminescence properties
Crossref DOI link: https://doi.org/10.1134/S1063784217090055
Published Online: 2017-09-20
Published Print: 2017-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Dorokhin, M. V.
Zdoroveyshchev, A. V.
Malysheva, E. I.
Danilov, Yu. A.
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