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Influence of Dopant Incomplete Ionization on the Capacitance of a Reverse-Biased 4H-SiC p+−i−n+ Diode

Crossref DOI link: https://doi.org/10.1134/S1063784218060130

Published Online: 2018-06-29

Published Print: 2018-06

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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