Features of the Frequency Dependence of Capacitance–Voltage Characteristics of a Semiconductor Structure of a Photoelectric Converter Based on a p–n Junction with an Antireflective Film of Porous Silicon
Crossref DOI link: https://doi.org/10.1134/S1063784218120204
Published Online: 2019-01-28
Published Print: 2018-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Tregulov, V. V.
Text and Data Mining valid from 2018-12-01
Article History
Received: 23 February 2018
First Online: 28 January 2019