Current Transmission Mechanisms in the Semiconductor Structure of a Photoelectric Transducer with an n+–p Junction and an Antireflection Porous Silicon Film Formed by Color Etching
Crossref DOI link: https://doi.org/10.1134/S1063784219050232
Published Online: 2019-06-13
Published Print: 2019-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Tregulov, V. V.
Litvinov, V. G.
Ermachikhin, A. V.
Text and Data Mining valid from 2019-05-01
Version of Record valid from 2019-05-01
Article History
Received: 18 June 2018
Revised: 25 September 2018
Accepted: 10 October 2018
First Online: 13 June 2019