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Effect of Conductivity Type and Doping Level of Silicon Crystals on the Size of Formed Pore Channels during Anodic Etching in Hydrofluoric Acid Solutions

Crossref DOI link: https://doi.org/10.1134/S1063784219100268

Published Online: 2019-10-14

Published Print: 2019-10

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Zegrya, G. G.

Ulin, V. P.

Zegrya, A. G.

Ulin, N. V.

Mikhailov, Yu. M.
License Information

Text and Data Mining valid from 2019-10-01

Version of Record valid from 2019-10-01
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Article History

Received: 11 March 2019

Revised: 11 March 2019

Accepted: 25 March 2019

First Online: 14 October 2019

CONFLICTS OF INTEREST

: The authors declare that they do not have any conflicts of interest.

Updates are available Erratum dated 2021-03-01

Click to view Erratum: https://doi.org/10.1134/s106378422102016x