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Epitaxy of semipolar GaN on a Si(001) substrate with a SiC buffer layer

Crossref DOI link: https://doi.org/10.1134/S1063785014050046

Published Online: 2014-06-18

Published Print: 2014-05

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Bessolov, V. N.

Konenkova, E. V.

Kukushkin, S. A.

Myasoedov, A. V.

Osipov, A. V.

Rodin, S. N.

Shcheglov, M. P.

Feoktistov, N. A.
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