Defects in heteroepitaxial CdHgTe/Si layers and their behavior under conditions of implanted p +-n photodiode structure formation
Crossref DOI link: https://doi.org/10.1134/S1063785014080239
Published Online: 2014-08-31
Published Print: 2014-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Mynbaev, K. D.
Bazhenov, N. L.
Yakushev, M. V.
Marin, D. V.
Varavin, V. S.
Sidorov, Yu. G.
Dvoretsky, S. A.
Text and Data Mining valid from 2014-08-01