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Adjusting the position of the optimum operating point of a power heterostructure field-effect transistor by forming a gate potential barrier based on a donor-acceptor structure

Crossref DOI link: https://doi.org/10.1134/S106378501502008X

Published Online: 2015-03-19

Published Print: 2015-02

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Lukashin, V. M.

Pashkovskii, A. B.

Lapin, V. G.

Shcherbakov, S. V.

Zhuravlev, K. S.

Toropov, A. I.

Kapralova, A. A.
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