Document is current

Any future updates will be listed below

Fabrication of quasi-superlattices at the interface between 3C-SiC epitaxial layer and substrates of hexagonal SiC polytypes by sublimation epitaxy in vacuum

Crossref DOI link: https://doi.org/10.1134/S106378501512010X

Published Online: 2016-01-09

Published Print: 2015-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

About CrossMark