Complex use of the diffraction techniques in depth profiling of the crystal lattice parameter and composition of InGaAs/GaAs gradient layers
Crossref DOI link: https://doi.org/10.1134/S1063785016050023
Published Online: 2016-06-17
Published Print: 2016-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Baidakova, M. V.
Kirilenko, D. A.
Sitnikova, A. A.
Yagovkina, M. A.
Klimko, G. V.
Sorokin, S. V.
Sedova, I. V.
Ivanov, S. V.
Romanov, A. E.
License valid from 2016-05-01