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Extremely deep profiling analysis of the atomic composition of thick (>100 μm) GaAs layers within power PIN diodes by secondary ion mass spectrometry

Crossref DOI link: https://doi.org/10.1134/S106378501608006X

Published Online: 2016-11-30

Published Print: 2016-08

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Drozdov, M. N.

Drozdov, Yu. N.

Yunin, P. A.

Folomin, P. I.

Gritsenko, A. B.

Kryukov, V. L.

Kryukov, E. V.
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License valid from 2016-08-01