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Stress generation and relaxation in (Al,Ga)N/6H-SiC heterostructure grown by plasma-assisted molecular-beam epitaxy

Crossref DOI link: https://doi.org/10.1134/S106378501705008X

Published Online: 2017-06-16

Published Print: 2017-05

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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