The influence of metamorphic-buffer layer design on the retention of characteristics of InGaAs/GaAs metamorphic HEMT
Crossref DOI link: https://doi.org/10.1134/S1063785017090243
Published Online: 2017-10-15
Published Print: 2017-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Nikitina, E. V.
Lazarenko, A. A.
Pirogov, E. V.
Sobolev, M. S.
Berezovskaya, T. N.
License valid from 2017-09-01