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The effect of nitridation parameters and initial growth conditions on the polarity of GaN epitaxial layers grown by plasma-assisted molecular-beam epitaxy on Si(111) substrates

Crossref DOI link: https://doi.org/10.1134/S1063785017110116

Published Online: 2017-12-02

Published Print: 2017-11

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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